검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications Storm DF, Katzer DS, Mittereder JA, Binari SC, Shanabrook BV, Xu X, McVey DS, Vaudo RP, Brandes GR Journal of Crystal Growth, 281(1), 32, 2005 |
| 2 |
Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates Storm DF, Katzer DS, Mittereder JA, Binari SC, Shanabrook BV, Zhou L, Smith DJ, Xu X, McVey D, Vaudo RP, Brandes GR Journal of Vacuum Science & Technology B, 23(3), 1190, 2005 |
| 3 |
Growth and characterization of low defect GaN by hydride vapor phase epitaxy Xu XP, Vaudo RP, Loria C, Salant A, Brandes GR, Chaudhuri J Journal of Crystal Growth, 246(3-4), 223, 2002 |
| 4 |
Atomic Nitrogen-Production in a Molecular-Beam Epitaxy Compatible Electron-Cyclotron-Resonance Plasma Source Vaudo RP, Cook JW, Schetzina JF Journal of Vacuum Science & Technology B, 12(2), 1232, 1994 |