검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Understanding and controlling Ga contamination in InAlN barrier layers Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G Journal of Crystal Growth, 507, 139, 2019 |
| 2 |
Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer Kanyandekwe J, Baines Y, Richy J, Favier S, Leroux C, Blachier D, Mazel Y, Veillerot M, Barnes JP, Mrad M, Wiese C, Charles M Journal of Crystal Growth, 515, 48, 2019 |
| 3 |
Forming mechanism of Te-based conductive-bridge memories Mendes MK, Martinez E, Marty A, Veillerot M, Yamashita Y, Gassilloud R, Bernard M, Renault O, Barrett N Applied Surface Science, 432, 34, 2018 |
| 4 |
MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators Thomas C, Baudry X, Barnes JP, Veillerot M, Jouneau PH, Pouget S, Crauste O, Meunier T, Levy LP, Ballet P Journal of Crystal Growth, 425, 195, 2015 |
| 5 |
Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe Hartmann JM, Benevent V, Veillerot M, Halimaoui A Thin Solid Films, 557, 19, 2014 |
| 6 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D Solid-State Electronics, 83, 10, 2013 |
| 7 |
Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers Hartmann JM, Barnes JP, Veillerot M, Fedeli JM, La Guillaume QBA, Calvo V Journal of Crystal Growth, 347(1), 37, 2012 |
| 8 |
Thermal evolution of chemical oxides and (100) silicon at 300 degrees C in ambient air as seen by attenuated total reflection infrared spectroscopy Tardif F, Chabli A, Danel A, Rochat N, Veillerot M Journal of the Electrochemical Society, 150(6), G333, 2003 |