검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Nuclear power, climate change and energy security: Exploring British public attitudes Corner A, Venables D, Spence A, Poortinga W, Demski C, Pidgeon N Energy Policy, 39(9), 4823, 2011 |
| 2 |
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering Ban I, Ozturk MC, Misra V, Wortman JJ, Venables D, Maher DM Journal of the Electrochemical Society, 146(3), 1189, 1999 |
| 3 |
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2 O'Neil PA, Ozturk MC, Batchelor AD, Venables D, Xu MM, Maher DM Journal of the Electrochemical Society, 146(8), 3070, 1999 |
| 4 |
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic O'Neil PA, Ozturk MC, Batchelor AD, Venables D, Maher DM Journal of the Electrochemical Society, 146(8), 3079, 1999 |
| 5 |
Secondary electron imaging as a two-dimensional dopant profiling technique : Review and update Venables D, Jain H, Collins DC Journal of Vacuum Science & Technology B, 16(1), 362, 1998 |
| 6 |
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si Neogi SS, Venables D, Na ZY, Maher DM Journal of Vacuum Science & Technology B, 16(1), 471, 1998 |
| 7 |
Quantitative 2-Dimensional Dopant Profiles Obtained Directly from Secondary-Electron Images Venables D, Maher DM Journal of Vacuum Science & Technology B, 14(1), 421, 1996 |
| 8 |
Heteroepitaxy of Lattice-Matched Compound Semiconductors on Silicon Bachmann KJ, Dietz N, Miller AE, Venables D, Kelliher JT Journal of Vacuum Science & Technology A, 13(3), 696, 1995 |
| 9 |
A Study of Silicon Epitaxial-Growth on Silicon Substrates Exposed to Ar Electron-Cyclotron-Resonance Plasmas Buaud PP, Hu YZ, Spanos L, Irene EA, Christensen KN, Venables D, Maher DM Journal of Vacuum Science & Technology B, 13(4), 1442, 1995 |