검색결과 : 27건
| No. | Article |
|---|---|
| 1 |
Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE Matta S, Brault J, Korytov M, Vuong TQP, Chaix C, Al Khalfioui M, Vennegues P, Massies J, Gil B Journal of Crystal Growth, 499, 40, 2018 |
| 2 |
Dislocation densities reduction in MBE-grown AIN thin films by high-temperature annealing Nemoz M, Dagher R, Matta S, Michon A, Vennegues P, Brault J Journal of Crystal Growth, 461, 10, 2017 |
| 3 |
Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber Vermillac M, Lupi JF, Peters F, Cabie M, Vennegues P, Kucera C, Neisius T, Ballato J, Blanc W Journal of the American Ceramic Society, 100(5), 1814, 2017 |
| 4 |
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Cordier Y, Damilano B, Aing P, Chaix C, Linez F, Tuomisto F, Vennegues P, Frayssinet E, Lefebvre D, Portail M, Nemoz M Journal of Crystal Growth, 433, 165, 2016 |
| 5 |
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells Lekhal K, Hussain S, De Mierry P, Vennegues P, Nemoz M, Chauveau JM, Damilano B Journal of Crystal Growth, 434, 25, 2016 |
| 6 |
Growth of semipolar (20(2)over-bar1) GaN layers on patterned silicon (114) 1 degrees off by Metal Organic Vapor Phase Epitaxy Khoury M, Leroux M, Nemoz M, Feuillet G, Zuniga-Perez J, Vennegues P Journal of Crystal Growth, 419, 88, 2015 |
| 7 |
Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Xia Y, Brault J, Vennegues P, Nemoz M, Teisseire M, Leroux M, Chauveau JM Journal of Crystal Growth, 388, 35, 2014 |
| 8 |
Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D Journal of Crystal Growth, 398, 23, 2014 |
| 9 |
Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults Tendille F, De Mierry P, Vennegues P, Chenot S, Teisseire M Journal of Crystal Growth, 404, 177, 2014 |
| 10 |
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes Kim-Chauveau H, Frayssinet E, Damilano B, De Mierry P, Bodiou L, Nguyen L, Vennegues P, Chauveau JM, Cordier Y, Duboz JY, Charash R, Vajpeyi A, Lamy JM, Akhter M, Maaskant PP, Corbett B, Hangleiter A, Wieck A Journal of Crystal Growth, 338(1), 20, 2012 |