검색결과 : 4건
No. | Article |
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1 |
Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications Vos I, Hellin D, Vereecke G, Pavel E, Boullart W, Vertommen J Journal of Vacuum Science & Technology B, 27(5), 2301, 2009 |
2 |
Dry development in an O-2/SO2 plasma for sub-0.18 mu m top layer imaging processes Goethals AM, Van Roey F, Sugihara T, Van den Hove L, Vertommen J, Klippert W Journal of Vacuum Science & Technology B, 16(6), 3322, 1998 |
3 |
Dry Development for 0.25 Mu-M Top Surface Imaging Vertommen J, Goethals AM Journal of the Electrochemical Society, 144(7), 2461, 1997 |
4 |
Characterization and Residue Elimination of Hot Aluminum Etching in a Transformer Coupled Plasma Etcher Kopalidis PM, Vertommen J, Badenes G Journal of the Electrochemical Society, 143(5), 1763, 1996 |