화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications
Vos I, Hellin D, Vereecke G, Pavel E, Boullart W, Vertommen J
Journal of Vacuum Science & Technology B, 27(5), 2301, 2009
2 Dry development in an O-2/SO2 plasma for sub-0.18 mu m top layer imaging processes
Goethals AM, Van Roey F, Sugihara T, Van den Hove L, Vertommen J, Klippert W
Journal of Vacuum Science & Technology B, 16(6), 3322, 1998
3 Dry Development for 0.25 Mu-M Top Surface Imaging
Vertommen J, Goethals AM
Journal of the Electrochemical Society, 144(7), 2461, 1997
4 Characterization and Residue Elimination of Hot Aluminum Etching in a Transformer Coupled Plasma Etcher
Kopalidis PM, Vertommen J, Badenes G
Journal of the Electrochemical Society, 143(5), 1763, 1996