검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
AIN interlayer to improve the epitaxial growth of SmN on GaN (0001) Vezian S, Damilano B, Natali E, Al Khalfioui M, Massies J Journal of Crystal Growth, 450, 22, 2016 |
| 2 |
Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films Natali F, Vezian S, Granville S, Damilano B, Trodahl HJ, Anton EM, Warring H, Semond F, Cordier Y, Chong SV, Ruck BJ Journal of Crystal Growth, 404, 146, 2014 |
| 3 |
Structural trends in Si dots formation on SiC surfaces using CVD environment Portail M, Vezian S, Teisseire M, Michon A, Chassagne T, Zielinski M Journal of Crystal Growth, 404, 157, 2014 |
| 4 |
Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC Portail M, Michon A, Vezian S, Lefebvre D, Chenot S, Roudon E, Zielinski M, Chassagne T, Tiberj A, Camassel J, Cordier Y Journal of Crystal Growth, 349(1), 27, 2012 |
| 5 |
GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth Vezian S, Alloing B, Zuniga-Perez J Journal of Crystal Growth, 323(1), 326, 2011 |
| 6 |
AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first? Le Louarn A, Vezian S, Semond F, Massies J Journal of Crystal Growth, 311(12), 3278, 2009 |
| 7 |
Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source Vezian S, Le Louarn A, Massies J Journal of Crystal Growth, 303(2), 419, 2007 |
| 8 |
Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride Vezian S, Natali F, Semond F, Massies J Applied Surface Science, 234(1-4), 445, 2004 |
| 9 |
InGaN heterostructures grown by molecular beam epitaxy: from growth mechanism to optical properties Damilano B, Grandjean N, Vezian S, Massies J Journal of Crystal Growth, 227, 466, 2001 |