검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA Solid-State Electronics, 80, 19, 2013 |
| 2 |
Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation Douglas EA, Pearton SJ, Poling B, Via GD, Liu L, Ren F Electrochemical and Solid State Letters, 14(11), H464, 2011 |
| 3 |
Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, Pearton SJ Journal of Vacuum Science & Technology B, 28(5), 1044, 2010 |
| 4 |
Dramatic improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ Journal of the Electrochemical Society, 151(12), G915, 2004 |
| 5 |
Proton irradiation of MgO- or SC2O3 passivated AlGaN/GaN high electron mobility transistors Luo B, Ren F, Allums KK, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Fitch RC, Gillespie JK, Jenkins TJ, Dettmer R, Sewell J, Via GD, Crespo A, Baca AG, Shul RJ Solid-State Electronics, 47(6), 1015, 2003 |
| 6 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |
| 7 |
Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS Solid-State Electronics, 46(9), 1427, 2002 |
| 8 |
Wet Chemical Digital Etching of GaAs at Room-Temperature Desalvo GC, Bozada CA, Ebel JL, Look DC, Barrette JP, Cerny CL, Dettmer RW, Gillespie JK, Havasy CK, Jenkins TJ, Nakano K, Pettiford CI, Quach TK, Sewell JS, Via GD Journal of the Electrochemical Society, 143(11), 3652, 1996 |