화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Oxygen incorporated during deposition determines the crystallinity of magnetron-sputtered Ta3N5 films
Rudolph M, Vickridge I, Foy E, Alvarez J, Kleider JP, Stanescu D, Magnan H, Herlin-Boime N, Bouchet-Fabre B, Minea T, Hugon MC
Thin Solid Films, 685, 204, 2019
2 Anodic film growth and silver enrichment during anodizing of an Mg-0.6 at.% Ag alloy in fluoride-containing organic electrolytes
Nemcova A, Li Y, Kubena I, Vickridge I, Ganem JJ, Yerokhin A, Habazaki H, Skeldon P
Electrochimica Acta, 280, 300, 2018
3 XPS and NRA investigations during the fabrication of gold nanostructured functionalized screen-printed sensors for the detection of metallic pollutants
Jasmin JP, Miserque F, Dumas E, Vickridge I, Ganem JJ, Cannizzo C, Chausse A
Applied Surface Science, 397, 159, 2017
4 Method for Determining the Polymer Content in,Nonsoluble Polydiacetylene Films: Application to Pentacosadiynoic Acid
Spagnoli S, Briand E, Vickridge I, Fave JL, Schott M
Langmuir, 33(6), 1419, 2017
5 Film growth and alloy enrichment during anodizing AZ31 magnesium alloy in fluoride/glycerol electrolytes of a range of water contents
Nemcova A, Galal O, Skeldon P, Kubena I, Smid M, Briand E, Vickridge I, Ganem JJ, Habazaki H
Electrochimica Acta, 219, 28, 2016
6 Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regime
Cubukcu M, von Bardeleben HJ, Cantin JL, Vickridge I, Lemaitre A
Thin Solid Films, 519(23), 8212, 2011
7 Ageing of V2O5 thin films induced by Li intercalation multi-cycling
Swiatowska-Mrowiecka J, Maurice V, Zanna S, Klein L, Briand E, Vickridge I, Marcus P
Journal of Power Sources, 170(1), 160, 2007
8 TaSiN diffusion barriers deposited by reactive magnetron sputtering
Letendu F, Hugon MC, Agius B, Vickridge I, Berthier C, Lameille JM
Thin Solid Films, 513(1-2), 118, 2006
9 Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
Colder H, Morales M, Rizk R, Vickridge I
Materials Science Forum, 483, 287, 2005
10 Damage distributions induced by channeling implantation of nitrogen into 6H silicon carbide
Zolnai Z, Khanh NQ, Lohner T, Ster A, Kotai E, Vickridge I, Gyulai J
Materials Science Forum, 433-4, 645, 2002