검색결과 : 23건
| No. | Article |
|---|---|
| 1 |
Growth of GaN films on PLD-deposited TaC substrates Kirchner KW, Derenge MA, Zheleva TS, Vispute RD, Jones KA Journal of Crystal Growth, 312(19), 2661, 2010 |
| 2 |
Enhanced conductivity of pulsed laser deposited n-InGaZn6O9 films and its rectifying characteristics with p-SiC Sahu RK, Vispute RD, Dhar S, Kundaliya DC, Manoharan SS, Venkatesan T, Lim SH, Salamanca-Riba LG Thin Solid Films, 517(5), 1829, 2009 |
| 3 |
Compositional origin of surface roughness variations in air-annealed ZnO single crystals Pugel DE, Vispute RD, Hullavarad SS, Venkatesan T, Varughese B Applied Surface Science, 254(8), 2220, 2008 |
| 4 |
Realization of Mg((x=0.15))Zn((1-x=0.85))O-based metal-semiconductor-metal UV detector on quartz and sapphire Hullavarad SS, Dhar S, Varughese B, Takeuchi I, Venkatesan T, Vispute RD Journal of Vacuum Science & Technology A, 23(4), 982, 2005 |
| 5 |
Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method Alam J, Bathe R, Vispute RD, Zavada JM, Litton CW, Iliadis AA, Mohammad SN Journal of Vacuum Science & Technology B, 22(2), 624, 2004 |
| 6 |
Structural defects formed in Al-implanted and annealed 4H-SiC Jones KA, Zheleva TS, Kulkarni VN, Ervin MH, Derenge MA, Vispute RD Materials Science Forum, 457-460, 889, 2004 |
| 7 |
Activation of implanted Al and co-implanted Al/C or Al/Si in 4H-SiC Jones KA, Zheleva TS, Ervin MH, Shah PB, Derenge MA, Gerardi G, Freitas JA, Vispute RD Materials Science Forum, 457-460, 929, 2004 |
| 8 |
A comparison of the AIN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere Derenge MA, Jones KA, Kirchner KW, Ervin MH, Zheleva TS, Hullavarad S, Vispute RD Solid-State Electronics, 48(10-11), 1867, 2004 |
| 9 |
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC Ruppalt LB, Stafford S, Yuan D, Jones KA, Ervin MH, Kirchner KW, Zheleva TS, Wood MC, Geil BR, Forsythe E, Vispute RD, Venkatesan T Solid-State Electronics, 47(2), 253, 2003 |
| 10 |
Comparison of Al and Al/C Co-implants in 4H-SiC annealed with an AlN cap Jones KA, Shah PB, Derenge MA, Ervin MH, Gerardi GJ, Freitas JA, Braga GCB, Vispute RD, Sharma RP, Holland OW Materials Science Forum, 389-3, 819, 2002 |