| 1 |
In-situ characterization of electron-assisted regeneration of Cz-Si solar cells
Helmich L, Walter DC, Bredemeier D, Falster R, Voronkov VV, Schmidt J
Solar Energy Materials and Solar Cells, 185, 283, 2018 |
| 2 |
Behavior of volatile dopants (P, Sb) in Czochralski silicon growth
Porrini M, Scala R, Voronkov VV
Journal of Crystal Growth, 460, 13, 2017 |
| 3 |
On the equilibrium concentration of boron-oxygen defects in crystalline silicon
Walter DC, Falster R, Voronkov VV, Schmidt J
Solar Energy Materials and Solar Cells, 173, 33, 2017 |
| 4 |
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
Murphy JD, McGuire RE, Bothe K, Voronkov VV, Falster RJ
Solar Energy Materials and Solar Cells, 120, 402, 2014 |
| 5 |
Lifetimes exceeding 1 ms in 1-Omega cm boron-doped Cz-silicon
Walter DC, Lim B, Bothe K, Falster R, Voronkov VV, Schmidt J
Solar Energy Materials and Solar Cells, 131, 51, 2014 |
| 6 |
Intrinsic point defects and grown-in microdefects in silicon crystals-comment on: "Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results'', T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16
Voronkov VV, Falster R
Journal of Crystal Growth, 351(1), 115, 2012 |
| 7 |
Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres
Voronkov VV, Falster R
Thin Solid Films, 518(9), 2346, 2010 |
| 8 |
Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900 degrees C
Voronkova GI, Batunina AV, Voronkov VV, Falster R, Golovina VN, Guliaeva AS, Tiurina NB
Thin Solid Films, 518(9), 2350, 2010 |
| 9 |
Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitial
Voronkov VV
Journal of Crystal Growth, 310(7-9), 1307, 2008 |
| 10 |
The effect of nitrogen on void formation in Czochralski silicon crystals
Voronkov VV, Falster R
Journal of Crystal Growth, 273(3-4), 412, 2005 |
