화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)
Mao AY, Son KA, White JM, Kwong DL, Roberts DA, Vrtis RN
Journal of Vacuum Science & Technology A, 17(3), 954, 1999
2 Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivated Si(100)
Mao AY, Son KA, Hess DA, Brown LA, White JM, Kwong DL, Roberts DA, Vrtis RN
Thin Solid Films, 349(1-2), 230, 1999
3 Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)(2))(5) and O-2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications
Son KA, Mao AY, Kim BY, Liu F, Pylant ED, Hess DA, White JM, Kwong DL, Roberts DA, Vrtis RN
Journal of Vacuum Science & Technology A, 16(3), 1670, 1998
4 Fluorine-Passivated Electroless Ni-P Films
Maeno M, Hirayama R, Izumi H, Takahashi R, Chiba K, Vrtis RN, Ohmi T
Journal of the Electrochemical Society, 141(10), 2649, 1994