화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallization
Gu S, Dunton SV, Walker AJ, Nallamothu S, Chen EH, Mahajani M, Herner SB, Eckert VL, Hu S, Konevecki M, Petti C, Radigan S, Raghuram U, Vyvoda MA
Journal of Vacuum Science & Technology B, 23(5), 2184, 2005
2 Role of sidewall scattering in feature profile evolution during Cl-2 and HBr plasma etching of silicon
Vyvoda MA, Li M, Graves DB, Lee H, Malyshev MV, Klemens FP, Lee JTC, Donnelly VM
Journal of Vacuum Science & Technology B, 18(2), 820, 2000
3 Hardmask charging during Cl-2 plasma etching of silicon
Vyvoda MA, Li M, Graves DB
Journal of Vacuum Science & Technology A, 17(6), 3293, 1999
4 Effects of plasma conditions on the shapes of features etched in Cl-2 and HBr plasmas. I. Bulk crystalline silicon etching
Vyvoda MA, Lee H, Malyshev MV, Klemens FP, Cerullo M, Donnelly VM, Graves DB, Kornblit A, Lee JTC
Journal of Vacuum Science & Technology A, 16(6), 3247, 1998