검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Analysis of radiation-induced defects and performance conditioning in high-power devices Niedernostheide FJ, Schmitt M, Schulze HJ, Kellner-Werdehausen U, Frohnmeyer A, Wachutka G Journal of the Electrochemical Society, 150(1), G15, 2003 |
| 2 |
Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias Felsl HP, Wachutka G Materials Science Forum, 389-3, 1153, 2002 |
| 3 |
The electrothermal behavior of 4H-SiC Schottky diodes at forward bias considering single pulse and pulsed current operation Felsl HP, Wachutka G, Rupp R Materials Science Forum, 433-4, 839, 2002 |
| 4 |
Carrier lifetime analysis by photoconductance decay and free carrier absorption measurements Schulze HJ, Frohnmeyer A, Niedernostheide FJ, Hille F, Tutto P, Pavelka T, Wachutka G Journal of the Electrochemical Society, 148(11), G655, 2001 |
| 5 |
Analytical tools for the characterization of power devices Schulze HJ, Frohnmeyer A, Niedernostheide FJ, Simmnacher B, Kolbesen BO, Tutto P, Pavelka T, Wachutka G Journal of the Electrochemical Society, 147(10), 3879, 2000 |
| 6 |
Electrothermal analysis of SiC power devices using physically-based device simulation Lades M, Wachutka G Solid-State Electronics, 44(2), 359, 2000 |