검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0) Bishop SM, Park JS, Gu J, Wagner BP, Reltmeier ZJ, Batchelor DA, Zakharov DN, Liliental-Weber Z, Davis RF Journal of Crystal Growth, 300(1), 83, 2007 |
| 2 |
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates Wagner BP, Reitmeier ZJ, Park JS, Bachelor D, Zakharov DN, Liliental-Weber Z, Davis RF Journal of Crystal Growth, 290(2), 504, 2006 |
| 3 |
Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001) Mecouch WJ, Wagner BP, Reitmeier ZJ, Davis RF, Pandarinath C, Rodriguez BJ, Nemanich RJ Journal of Vacuum Science & Technology A, 23(1), 72, 2005 |
| 4 |
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Bishop SM, Preble EA, Hallin C, Henry A, Storasta L, Jacobson H, Wagner BP, Reitmeier Z, Janzen E, Davis RF Materials Science Forum, 457-460, 221, 2004 |