검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates Desplanque L, Bucamp A, Troadec D, Patriarche G, Wallart X Journal of Crystal Growth, 512, 6, 2019 |
| 2 |
Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE Bucamp A, Coinon C, Codron JL, Troadec D, Wallart X, Desplanque L Journal of Crystal Growth, 512, 11, 2019 |
| 3 |
Static and low frequency noise characterization of ultra-thin body InAs MOSFETs Karatsori TA, Pastorek M, Theodorou CG, Fadjie A, Wichmann N, Desplanque L, Wallart X, Bollaert S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 143, 56, 2018 |
| 4 |
Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration Fahed M, Desplanque L, Troadec D, Patriarche G, Wallart X Journal of Crystal Growth, 477, 45, 2017 |
| 5 |
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors Westlund A, Sangare P, Ducournau G, Iniguez-de-la-Torre I, Nilsson PA, Gaquiere C, Desplanque L, Wallart X, Millithaler JF, Gonzalez T, Mateos J, Grahn J Solid-State Electronics, 104, 79, 2015 |
| 6 |
True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 79, 268, 2013 |
| 7 |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J Solid-State Electronics, 87, 85, 2013 |
| 8 |
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J Solid-State Electronics, 64(1), 47, 2011 |
| 9 |
Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 A degrees heterojunction bipolar transistors Mairiaux E, Desplanque L, Wallart X, Zaknoune M Journal of Vacuum Science & Technology B, 28(1), 17, 2010 |
| 10 |
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S, Grahn J Solid-State Electronics, 52(5), 775, 2008 |