검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy Poblenz C, Waltereit P, Speck JS Journal of Vacuum Science & Technology B, 23(4), 1379, 2005 |
| 2 |
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin R, Smorchkova I, Heying B Journal of Vacuum Science & Technology B, 23(4), 1562, 2005 |
| 3 |
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors Poblenz C, Waltereit P, Rajan S, Heikman S, Mishra UK, Speck JS Journal of Vacuum Science & Technology B, 22(3), 1145, 2004 |
| 4 |
Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy Brandt O, Waltereit P, Dhar S, Jahn U, Sun YJ, Trampert A, Ploog KH, Taglient MA, Tapfer L Journal of Vacuum Science & Technology B, 20(4), 1626, 2002 |
| 5 |
Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy Brandt O, Muralidharan R, Thamm A, Waltereit P, Ploog KH Applied Surface Science, 175, 419, 2001 |
| 6 |
M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields Waltereit P, Brandt O, Ramsteiner M, Trampert A, Grahn HT, Menniger J, Reiche M, Ploog KH Journal of Crystal Growth, 227, 437, 2001 |
| 7 |
Growth of M-plane GaN(1(1)over-bar-00) on gamma-LiAlO2(100) Waltereit P, Brandt O, Ramsteiner M, Uecker R, Reiche P, Ploog KH Journal of Crystal Growth, 218(2-4), 143, 2000 |
| 8 |
Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy Ploog KH, Brandt O, Muralidharan R, Thamm A, Waltereit P Journal of Vacuum Science & Technology B, 18(4), 2290, 2000 |