검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Electrochemical dissolution of cast iron in NaNO3 electrolyte Weber O, Weinmann M, Natter H, Bahre D Journal of Applied Electrochemistry, 45(6), 591, 2015 |
| 2 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F Solid-State Electronics, 88, 15, 2013 |
| 3 |
Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances Ben Akkez I, Fenouillet-Beranger C, Cros A, Perreau P, Haendler S, Weber O, Andrieu F, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gouraud P, Margain A, Borowiak C, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Balestra F, Ghibaudo G, Boeuf F Solid-State Electronics, 90, 143, 2013 |
| 4 |
Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, de Buttet C, Abbate F, Campidelli Y, Pinzelli L, Gouraud P, Margain A, Peru S, Bourdelle KK, Nguyen BY, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F Solid-State Electronics, 74, 32, 2012 |
| 5 |
Micropowder injection molding: investigation of powder-binder separation using synchrotron-based microtomography and 3D image analysis Weber O, Rack A, Redenbach C, Schulz M, Wirjadi O Journal of Materials Science, 46(10), 3568, 2011 |
| 6 |
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance Le Royer C, Casse M, Cooper D, Andrieu F, Weber O, Brevard L, Perreau P, Damlencourt JF, Baudot S, Previtali B, Tabone C, Allain F, Scheiblin P, Rauer C, Figuet C, Aulnette C, Daval N, Nguyen BY, Bourdelle KK, Gyani J, Valenza M Solid-State Electronics, 65-66, 9, 2011 |
| 7 |
A study of N-induced traps due to a nitrided gate in high-kappa/metal gate nMOSFETs and their impact on electron mobility Casse M, Garros X, Weber O, Andrieu F, Reimbold G, Boulanger F Solid-State Electronics, 65-66, 139, 2011 |
| 8 |
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T Solid-State Electronics, 54(9), 849, 2010 |
| 9 |
Co-deposition of silver nanoclusters and sputtered alumina for sensor devices Schultes G, Schmidt M, Truar M, Goettel D, Freitag-Weber O, Werner U Thin Solid Films, 515(20-21), 7790, 2007 |
| 10 |
On the mobility in high-kappa/metal gate MOSFETs: Evaluation of the high-kappa phonon scattering impact Weber O, Casse M, Thevenod L, Ducroquet F, Ernst T, Deleonibus S Solid-State Electronics, 50(4), 626, 2006 |