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| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy grown 0.6 eV n/p/n lnPAs/InGaAs/InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant Wernsman B, Bird T, Sheldon M, Link S, Wehrer R Journal of Vacuum Science & Technology B, 24(3), 1626, 2006 |