검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Silicon nitride films deposited using ECR-PECVD technique for coating InGaAlAs high power laser facets Sah RE, Rinner F, Baumann H, Kiefer R, Mikulla M, Weimann G, Dammann M Journal of the Electrochemical Society, 150(7), F129, 2003 |
| 2 |
Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation Simanowski S, Mermelstein C, Walther M, Herres N, Kiefer R, Rattunde M, Schmitz J, Wagner J, Weimann G Journal of Crystal Growth, 227, 595, 2001 |
| 3 |
Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3-2.7 mu m laser structures Simanowski S, Herres N, Mermelstein C, Kiefer R, Schmitz J, Walther M, Wagner J, Weimann G Journal of Crystal Growth, 209(1), 15, 2000 |
| 4 |
Sidewall slope control of chemically assisted ion-beam etched structures in InP-based materials Daleiden J, Czotscher K, Hoffmann C, Kiefer R, Klussmann S, Muller S, Nutsch A, Pletschen W, Weisser S, Trankle G, Braunstein J, Weimann G Journal of Vacuum Science & Technology B, 16(4), 1864, 1998 |
| 5 |
Modulation-Doped InAlAs/InGaAs Quantum-Well Structures for High-Electron-Mobility Transistors Klein W, Bohm G, Sexl M, Grigull S, Heiss H, Trankle G, Weimann G Journal of Vacuum Science & Technology B, 12(2), 1306, 1994 |
| 6 |
Progress in Mask Technology for Ion-Implantation Based Nanofabrication Burkard M, Griesinger UA, Menschig A, Schweizer H, Klein H, Bohm G, Trankle G, Weimann G Journal of Vacuum Science & Technology B, 12(6), 3677, 1994 |