검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
Observation of higher-order topological acoustic states protected by generalized chiral symmetry Ni X, Weiner M, Alu A, Khanikaev AB Nature Materials, 18(2), 113, 2019 |
| 2 |
Observation of higher-order topological acoustic states protected by generalized chiral symmetry Ni X, Weiner M, Alu A, Khanikaev AB Nature Materials, 18(2), 113, 2019 |
| 3 |
Analysis of the chemical composition of energy drinks for contents of stimulant and filling compounds Zukiewicz-Sobczak W, Sobczak P, Siluch M, Weiner M, Pawlowicz-Sosnowska ET, Wojtyla-Buciora P, Chmielewski J, Zeber-Dzikowska I, Gworek B, Zagorski J Przemysl Chemiczny, 97(4), 560, 2018 |
| 4 |
Improvement of constraint-based flux estimation during L-phenylalanine production with Escherichia coli using targeted knock-out mutants Weiner M, Trondle J, Albermann C, Sprenger GA, Weuster-Botz D Biotechnology and Bioengineering, 111(7), 1406, 2014 |
| 5 |
Carbon Storage in Recombinant Escherichia coli During Growth on Glycerol and Lactic Acid Weiner M, Trondle J, Albermann C, Sprenger GA, Weuster-Botz D Biotechnology and Bioengineering, 111(12), 2508, 2014 |
| 6 |
A massively parallel PicoTiterplate (TM) based platform for discrete picoliter-scale polymerase chain reactions (vol 24, pg 3769, 2003) Leamon JH, Lee WL, Tartaro KR, Lanza JR, Sarkis GJ, deWinter AD, Berka J, Weiner M, Rothberg JM, Lohman KL Electrophoresis, 25(7-8), 1176, 2004 |
| 7 |
High voltage (500V-14kV) 4H-SiC unipolar-bipolar Darlington transistors for high-power and high-temperature applications Zhao JH, Li X, Tone K, Alexandrov P, Fursin L, Carter J, Weiner M Materials Science Forum, 457-460, 957, 2004 |
| 8 |
Avalanche multiplication and breakdown in 4H-SiC diodes Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH, Weiner M Materials Science Forum, 457-460, 1069, 2004 |
| 9 |
The first 4H-SiC BJT-based 20 kHz, 7HP PWM DC-to-AC inverter for induction motor control applications Zhao JH, Zhang J, Luo Y, Hu X, Li Y, Yu H, Lai J, Alexandrov P, Fursin L, Li X, Carter J, Weiner M Materials Science Forum, 457-460, 1137, 2004 |
| 10 |
4,340V, 40 m Omega cm(2) normally-off 4H-SiC VJFET Zhao JH, Fursin L, Alexandrov P, Li X, Weiner M Materials Science Forum, 457-460, 1161, 2004 |