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Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric Bethge O, Henkel C, Abermann S, Pozzovivo G, Stoeger-Pollach M, Werner WSM, Smoliner J, Bertagnolli E Applied Surface Science, 258(8), 3444, 2012 |
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Characterization of thin films on the nanometer scale by Auger electron spectroscopy and X-ray photoelectron spectroscopy Powell CJ, Jablonski A, Werner WSM, Smekal W Applied Surface Science, 239(3-4), 470, 2005 |
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Characterization of thin films on the nanometer scale by Auger electron spectroscopy and X-ray photoelectron spectroscopy (vol 239, pg 470, 2005) Powell CJ, Jablonski A, Werner WSM, Smekal W Applied Surface Science, 242(3-4), 219, 2005 |
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Quantitative surface analysis with electrons Werner WSM Applied Surface Science, 235(1-2), 2, 2004 |
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Angular dependence of the surface excitation probability for medium energy electrons backscattered from Al and Si surfaces Werner WSM, Smekal W, Stori H, Eisenmenger-Sittner C Journal of Vacuum Science & Technology A, 19(5), 2388, 2001 |
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Auger voltage contrast imaging for the delineation of two-dimensional junctions in cross-sectioned metal-oxide-semiconductor devices Werner WSM, Lakatha H, Smith HE, LeTarte L, Ambrose V, Baker J Journal of Vacuum Science & Technology B, 16(1), 420, 1998 |