검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Ballistic modeling of InAs nanowire transistors Jansson K, Lind E, Wernersson LE Solid-State Electronics, 115, 47, 2016 |
| 2 |
MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures Ramvall P, Wang CH, Astromskas G, Vellianitis G, Holland M, Droopad R, Samuelson L, Wernersson LE, Passlack M, Diaz CH Journal of Crystal Growth, 374, 43, 2013 |
| 3 |
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy Wu J, Borg BM, Jacobsson D, Dick KA, Wernersson LE Journal of Crystal Growth, 383, 158, 2013 |
| 4 |
High quality InAs and GaSb thin layers grown on Si (111) Ghalamestani SG, Berg M, Dick KA, Wernersson LE Journal of Crystal Growth, 332(1), 12, 2011 |
| 5 |
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study Mandl B, Dey AW, Stangl J, Cantoro M, Wernersson LE, Bauer G, Samuelson L, Deppert K, Thelander C Journal of Crystal Growth, 334(1), 51, 2011 |
| 6 |
Modelling and optimization of III/V transistors with matrices of nanowires Larsen C, Arlelid M, Lind E, Wernersson LE Solid-State Electronics, 54(12), 1505, 2010 |
| 7 |
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates Astromskas G, Wallenberg LR, Wernersson LE Journal of Vacuum Science & Technology B, 27(5), 2222, 2009 |
| 8 |
Gated tunnel diode in oscillator applications with high frequency tuning Wernersson LE, Arlelid M, Egard M, Lind E Solid-State Electronics, 53(3), 292, 2009 |
| 9 |
GaAs/GaSb nanowire heterostructures grown by MOVPE Jeppsson M, Dick KA, Wagner JB, Caroff P, Deppert K, Samuelson L, Wernersson LE Journal of Crystal Growth, 310(18), 4115, 2008 |
| 10 |
Characterization of GaSb nanowires grown by MOVPE Jeppsson M, Dick KA, Nilsson HA, Skold N, Wagner JB, Caroff P, Wernersson LE Journal of Crystal Growth, 310(23), 5119, 2008 |