검색결과 : 16건
No. | Article |
---|---|
1 |
Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells Wang S, Scarabelli D, Du LJ, Kuznetsova YY, Pfeiffer LN, West KW, Gardner GC, Manfra MJ, Pellegrini V, Wind SJ, Pinczuk A Nature Nanotechnology, 13(1), 29, 2018 |
2 |
Full momentum- and energy-resolved spectral function of a 2D electronic system Jang JH, Yoo HM, Pfeiffer LN, West KW, Baldwin KW, Ashoori RC Science, 358(6365), 901, 2017 |
3 |
Smoothness and cleanliness of the GaAs (100) surface after thermal desorption of the native oxide for the synthesis of high mobility structures using molecular beam epitaxy Lee JJD, West KW, Baldwin KW, Pfeiffer LN Journal of Crystal Growth, 356, 46, 2012 |
4 |
Exciton condensation and perfect Coulomb drag Nandi D, Finck ADK, Eisenstein JP, Pfeiffer LN, West KW Nature, 488(7412), 481, 2012 |
5 |
Two-Dimensional Mott-Hubbard Electrons in an Artificial Honeycomb Lattice Singha A, Gibertini M, Karmakar B, Yuan S, Polini M, Vignale G, Katsnelson MI, Pinczuk A, Pfeiffer LN, West KW, Pellegrini V Science, 332(6034), 1176, 2011 |
6 |
Probing occupied states of the molecular layer in Au - alkanedithiol -GaAs diodes Hsu JWP, Lang DV, West KW, Loo YL, Halls MD, Raghavachari K Journal of Physical Chemistry B, 109(12), 5719, 2005 |
7 |
Ballistic transport at GHz frequencies in ungated HEMT structures Kang SM, Burke PJ, Pfeiffer LN, West KW Solid-State Electronics, 48(10-11), 2013, 2004 |
8 |
Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110)surfaces Ishii A, Aisaka T, Oh JW, Yoshita M, Akiyama H, Pfeiffer LN, West KW Thin Solid Films, 464-65, 38, 2004 |
9 |
Control of MBE surface step-edge kinetics to make an atomically smooth quantum well Yoshita M, Oh JW, Akiyama H, Pfeiffer LN, West KW Journal of Crystal Growth, 251(1-4), 62, 2003 |
10 |
High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers Loo YL, Hsu JWP, Willett RL, Baldwin KW, West KW, Rogers JA Journal of Vacuum Science & Technology B, 20(6), 2853, 2002 |