검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Resistivity control in unintentionally doped GaN films grown by MOCVD Wickenden AE, Koleske DD, Henry RL, Twigg ME, Fatemi M Journal of Crystal Growth, 260(1-2), 54, 2004 |
| 2 |
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Koleske DD, Wickenden AE, Henry RL, Twigg ME Journal of Crystal Growth, 242(1-2), 55, 2002 |
| 3 |
Reduction of dislocation density in GaN films on sapphire using AlN interlayers Chaudhuri J, George JT, Kolske DD, Wickenden AE, Henry RL, Rek Z Journal of Materials Science, 37(7), 1449, 2002 |
| 4 |
GaN decomposition in H-2 and N-2 at MOVPE temperatures and pressures Koleske DD, Wickenden AE, Henry RL, Culbertson JC, Twigg ME Journal of Crystal Growth, 223(4), 466, 2001 |
| 5 |
Adsorption and desorption of hydrogen on Ga-rich GaN(0001) Yang Y, Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL Materials Science Forum, 338-3, 1533, 2000 |
| 6 |
Extremely efficient electron stimulated desorption of hydrogen from GaN(0001) Bellitto VJ, Thoms BD, Koleske DD, Wickenden AE, Henry RL Materials Science Forum, 338-3, 1537, 2000 |
| 7 |
The reaction of oxygen with GaN(0001) Thoms BD, Bellitto VJ, Yang Y, Koleske DD, Wickenden AE, Henry RL Materials Science Forum, 338-3, 1541, 2000 |
| 8 |
Kinetic study of the oxidation of gallium nitride in dry air Wolter SD, Mohney SE, Venugopalan H, Wickenden AE, Koleske DD Journal of the Electrochemical Society, 145(2), 629, 1998 |
| 9 |
Surface composition and structure of GaN epilayers on sapphire Ahn J, Sung MM, Rabalais JW, Koleske DD, Wickenden AE Journal of Chemical Physics, 107(22), 9577, 1997 |
| 10 |
Repeatability of Si Concentration Measurements in Si-Doped GaN Films Chi PH, Simons DS, Wickenden AE, Koleske DD Journal of Vacuum Science & Technology A, 15(5), 2565, 1997 |