화학공학소재연구정보센터
검색결과 : 58건
No. Article
1 Third-order nanocircuit elements for neuromorphic engineering (vol 58, pg 518, 2020)
Kumar S, Williams RS, Wang ZW
Nature, 592(7853), E9, 2021
2 Third-order nanocircuit elements for neuromorphic engineering
Kumar S, Williams RS, Wang ZW
Nature, 585(7826), 518, 2020
3 Third-order nanocircuit elements for neuromorphic engineering
Kumar S, Williams RS, Wang ZW
Nature, 585(7826), 518, 2020
4 Charge disproportionate molecular redox for discrete memristive and memcapacitive switching
Goswami S, Rath SP, Thompson D, Hedstrom S, Annamalai M, Pramanick R, Ilic BR, Sarkar S, Hooda S, Nijhuis CA, Martin J, Williams RS, Goswami S, Venkatesan T
Nature Nanotechnology, 15(5), 380, 2020
5 Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Wang ZR, Joshi S, Savel'ev SE, Jiang H, Midya R, Lin P, Hu M, Ge N, Strachan JP, Li ZY, Wu Q, Barne M, Li GL, Xin HL, Williams RS, Xia QF, Yang JJ
Nature Materials, 16(1), 101, 2017
6 High-Speed and Low-Energy Nitride Memristors
Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li ZY, Williams RS, Yang JJ
Advanced Functional Materials, 26(29), 5290, 2016
7 Trilayer Tunnel Selectors for Memristor Memory Cells
Choi BJ, Zhang JM, Norris K, Gibson G, Kim KM, Jackson W, Zhang MXM, Li ZY, Yang JJ, Williams RS
Advanced Materials, 28(2), 356, 2016
8 Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
Kumar S, Graves CE, Strachan JP, Grafals EM, Kilcoyne ALD, Tyliszczak T, Weker JN, Nishi Y, Williams RS
Advanced Materials, 28(14), 2772, 2016
9 Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy
Kumar S, Strachan JP, Pickett MD, Bratkovsky A, Nishi Y, Williams RS
Advanced Materials, 26(44), 7505, 2014
10 Aprataxin resolves adenylated RNA-DNA junctions to maintain genome integrity
Tumbale P, Williams JS, Schellenberg MJ, Kunkel TA, Williams RS
Nature, 506(7486), 111, 2014