검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Bismuth a new dopant for GaN films grown by molecular beam epitaxy-surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic Novikov SV, Winser AJ, Li T, Campion R, Harrison I, Foxon CT Journal of Crystal Growth, 247(1-2), 35, 2003 |
| 2 |
Arsenic incorporation in GaN during growth by molecular beam epitaxy Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ, Humphreys CJ Journal of Crystal Growth, 251(1-4), 510, 2003 |
| 3 |
Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates Novikova SV, Zhao LX, Winser AJ, Kappers M, Barnard JS, Harrison I, Humphreys C, Foxon CT Journal of Crystal Growth, 256(3-4), 237, 2003 |
| 4 |
The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As-4 molecules Foxon CT, Harrison I, Novikov SV, Li T, Campion RP, Staddon CR, Davis CS, Winser AJ, Kovarsky AP, Ber BJ Journal of Crystal Growth, 234(2-3), 343, 2002 |
| 5 |
The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy Novikov SV, Winser AJ, Bell A, Harrison I, Li T, Campion RP, Staddon CR, Davis CS, Ponce FA, Foxon CT Journal of Crystal Growth, 240(3-4), 423, 2002 |
| 6 |
Growth of GaNAs films by molecular beam epitaxy Foxon CT, Novikov SV, Campion RP, Davis CS, Cheng TS, Winser AJ, Harrison I Journal of Crystal Growth, 227, 486, 2001 |
| 7 |
A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy Marlafeka S, Bock N, Cheng TS, Novikov SV, Winser AJ, Harrison I, Foxon CT, Brown PD Journal of Crystal Growth, 230(3-4), 415, 2001 |
| 8 |
Blue emission from arsenic doped gallium nitride Winser AJ, Harrison I, Novikov SV, Davis CS, Campion R, Cheng TS, Foxon CT Journal of Crystal Growth, 230(3-4), 527, 2001 |
| 9 |
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy Xu HZ, Wang ZG, Harrison I, Bell A, Ansell BJ, Winser AJ, Cheng TS, Foxon CT, Kawabe M Journal of Crystal Growth, 217(3), 228, 2000 |
| 10 |
Arsenic-doped GaN grown by molecular beam epitaxy Foxon CT, Novikov SV, Cheng TS, Davis CS, Campion RP, Winser AJ, Harrison I Journal of Crystal Growth, 219(4), 327, 2000 |