검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Interface stability in advanced high-kappa-metal-gate stacks Adelmann C, Franquet A, Conard T, Witters T, Ferain I, Meersschaut J, Jurczak M, De Meyer K, Kittl JA, Van Elshocht S Journal of Vacuum Science & Technology B, 27(3), 1021, 2009 |
| 2 |
Investigation on molybdenum and its conductive oxides as p-type metal gate candidates Li Z, Schram T, Witters T, Cho HJ, O'Sullivan B, Yamada N, Takaaki T, Hooker J, De Gendt S, De Meyer K Journal of the Electrochemical Society, 155(7), H481, 2008 |
| 3 |
Aqueous chemical solution deposition - Fast screening method for alternative high-k materials applied to Nd2O3 Van Elshocht S, Hardy A, Witters T, Adelmann C, Caymax M, Conard T, De Gendt S, Franquet A, Richard O, Van Bael MK, Mullens J, Heyns M Electrochemical and Solid State Letters, 10(4), G15, 2007 |
| 4 |
Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials Van Hoornick N, De Witte H, Witters T, Zhao C, Conard T, Huotari H, Swerts J, Schram T, Maes JW, De Gendt S, Heyns M Journal of the Electrochemical Society, 153(5), G437, 2006 |
| 5 |
Metallorganic chemical vapor deposition of dysprosium scandate high-k layers using mmp-type precursors Van Elshocht S, Lehnen P, Seitzinger B, Abrutis A, Adelmann C, Brijs B, Caymax M, Conard T, De Gendt S, Franquet A, Lohe C, Lukosius M, Moussa A, Richard O, Williams P, Witters T, Zimmerman P, Heyns M Journal of the Electrochemical Society, 153(9), F219, 2006 |
| 6 |
Bulk properties of MOCVD-deposited HfO2 layers fair high k dielectric applications Van Elshocht S, Baklanov M, Brijs B, Carter R, Caymax M, Carbonell L, Claes M, Conard T, Cosnier V, Date L, De Gendt S, Kluth J, Pique D, Richard O, Vanhaeren D, Vereecke G, Witters T, Zhao C, Heyns M Journal of the Electrochemical Society, 151(10), F228, 2004 |
| 7 |
Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching Claes M, De Gendt S, Witters T, Kaushik V, Conard T, Zhao C, Manabe Y, Delabie A, Rohr E, Chen J, Tsai W, Heyns MM Journal of the Electrochemical Society, 151(11), F269, 2004 |