검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
The influence of Ge on the SiC nucleation on (111)Si surfaces Pezoldt J, Wohner T, Stauden T, Schaefer JA, Masri P Materials Science Forum, 353-356, 183, 2001 |
| 2 |
In situ monitoring of the effect of Ge on the SiC growth on (111)Si surfaces Wohner T, Stauden T, Schaefer JA, Pezoldt J Materials Science Forum, 338-3, 281, 2000 |
| 3 |
The influence of foreign atoms on the early stages of SiC growth on (111)Si Pezoldt J, Masri P, Laridjani MR, Averous M, Wohner T, Schaefer JA, Stauden T, Ecke G, Pieterwas R, Spiess L Materials Science Forum, 338-3, 289, 2000 |
| 4 |
The diffusion coefficient of silicon in thin SiC layers as a criterion for the quality of the grown layers Cimalla V, Wohner T, Pezoldt J Materials Science Forum, 338-3, 321, 2000 |
| 5 |
Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces Wohner T, Cimalla V, Stauden T, Schaefer JA, Pezoldt J Thin Solid Films, 364(1-2), 28, 2000 |