화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE
Mauder C, Booker ID, Fahle D, Boukiour H, Behmenburg H, Khoshroo LR, Woitok JF, Vescan A, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 315(1), 220, 2011
2 Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
Mauder C, Reuters B, Wang KR, Fahle D, Trampert A, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Chou MMC, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 315(1), 246, 2011
3 Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
Mauder C, Reuters B, Khoshroo LR, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 312(11), 1823, 2010
4 Physico-chemical and electrical properties of rapid thermal oxides on Ge-rich SiGe heterolayers
Das R, Bera MK, Chakraborty S, Saha S, Woitok JF, Maiti CK
Applied Surface Science, 253(3), 1323, 2006
5 Growth and characterization of GaN-based structures on SiCOI-engineered substrates
Dikme Y, van Gemmern P, Lin YC, Szymakowski A, Kalisch H, Faure B, Richtarch C, Larheche H, Bove P, Letertre F, Woitok JF, Efthimiadis K, Jansen RH, Heuken M
Journal of Crystal Growth, 272(1-4), 500, 2004
6 Application of X-ray scattering methods to the analysis of Si-based heterostructures
Woitok JF
Thin Solid Films, 450(1), 138, 2004