검색결과 : 15건
No. | Article |
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1 |
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) Chen TA, Chuu CP, Tseng CC, Wen CK, Wong HSP, Pan SY, Li RT, Chao TA, Chueh WC, Zhang YF, Fu Q, Yakobson BI, Chang WH, Li LJ Nature, 579(7798), 219, 2020 |
2 |
How 2D semiconductors could extend Moore's law Li MY, Su SK, Wong HSP, Li LJ Nature, 567(7747), 169, 2019 |
3 |
Graphene and two-dimensional materials for silicon technology Akinwande D, Huyghebaert C, Wang CH, Serna MI, Goossens S, Li LJ, Wong HSP, Koppens FHL Nature, 573(7775), 507, 2019 |
4 |
Optoelectronic resistive random access memory for neuromorphic vision sensors Zhou FC, Zhou Z, Chen JW, Choy TH, Wang JL, Zhang N, Lin ZY, Yu SM, Kang JF, Wong HSP, Chai Y Nature Nanotechnology, 14(8), 776, 2019 |
5 |
Three-dimensional integration of nanotechnologies for computing and data storage on a single chip Shulaker MM, Hills G, Park RS, Howe RT, Saraswat K, Wong HSP, Mitra S Nature, 547(7661), 74, 2017 |
6 |
Removable and Recyclable Conjugated Polymers for Highly Selective and High-Yield Dispersion and Release of Low-Cost Carbon Nanotubes Lei T, Chen XY, Pitner G, Wong HSP, Bao ZN Journal of the American Chemical Society, 138(3), 802, 2016 |
7 |
MoS2 transistors with 1-nanometer gate lengths Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang QX, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu CM, Wong HSP, Javey A Science, 354(6308), 99, 2016 |
8 |
In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device Tian H, Zhao HM, Wang XF, Xie QY, Chen HY, Mohammad MA, Li C, Mi WT, Bie Z, Yeh CH, Yang Y, Wong HSP, Chiu PW, Ren TL Advanced Materials, 27(47), 7767, 2015 |
9 |
Large-Area Assembly of Densely Aligned Single-Walled Carbon Nanotubes Using Solution Shearing and Their Application to Field-Effect Transistors Park S, Pitner G, Giri G, Koo JH, Park J, Kim K, Wang HL, Sinclair R, Wong HSP, Bao ZN Advanced Materials, 27(16), 2656, 2015 |
10 |
Memory leads the way to better computing Wong HSP, Salahuddin S Nature Nanotechnology, 10(3), 191, 2015 |