화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(001) surface
Price RW, Tok ES, Liu R, Wee ATS, Woods NJ, Zhang J
Journal of Crystal Growth, 251(1-4), 676, 2003
2 Modified GSMBE for higher growth rate and non-selective growth
Woods NJ, Breton G, Graoui H, Zhang J
Journal of Crystal Growth, 227, 735, 2001
3 Optical second harmonic generation studies of epitaxial growth of Si and SiGe
Tok ES, Woods NJ, Price RW, Taylor AG, Zhang J
Journal of Crystal Growth, 209(2-3), 297, 2000
4 RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence
Tok ES, Woods NJ, Zhang J
Journal of Crystal Growth, 209(2-3), 321, 2000