| 1 |
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering
Ban I, Ozturk MC, Misra V, Wortman JJ, Venables D, Maher DM
Journal of the Electrochemical Society, 146(3), 1189, 1999 |
| 2 |
Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
Misra V, Lazar H, Wang Z, Wu Y, Niimi H, Lucovsky G, Wortman JJ, Hauser JR
Journal of Vacuum Science & Technology B, 17(4), 1836, 1999 |
| 3 |
Impact of floating gate dopant concentration and interpoly dielectric processing on tunnel dielectric reliability
Heinisch HH, Hornung BE, Linkous RB, Craig SA, Mirabedini MR, Wortman JJ
Journal of the Electrochemical Society, 145(4), 1351, 1998 |
| 4 |
Low-Temperature Plasma-Assisted Oxidation Combined with in-Situ Rapid Thermal Oxide Deposition for Stacked-Gate Si-SiO2 Heterostructures - Integrated Processing and Device Studies
Misra V, Hattangady SV, Yasuda T, Xu XL, Hornung B, Lucovsky G, Wortman JJ
Journal of Vacuum Science & Technology A, 12(4), 1371, 1994 |
| 5 |
Investigation of Roughened Silicon Surfaces Using Fractal Analysis .2. Chemical Etching, Rapid Thermal Chemical-Vapor-Deposition, and Thermal-Oxidation
Spanos L, Liu Q, Irene EA, Zettler T, Hornung B, Wortman JJ
Journal of Vacuum Science & Technology A, 12(5), 2653, 1994 |
| 6 |
Formation of Si-SiO2 Stacked-Gate Structures by Plasma-Assisted and Rapid-Thermal Processing - Improved Device Performance Through Process Integration
Lucovsky G, Wortman JJ, Yasuda T, Xu XL, Misra V, Hattangady SV, Ma Y, Hornung B
Journal of Vacuum Science & Technology B, 12(4), 2839, 1994 |
