검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, Park YD Journal of Vacuum Science & Technology A, 20(3), 721, 2002 |
| 2 |
Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 Luo B, Johnson JW, Gila BP, Onstine A, Abernathy CR, Ren F, Pearton SJ, Baca AG, Dabiran AM, Wowchack AM, Chow PP Solid-State Electronics, 46(4), 467, 2002 |
| 3 |
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE Johnson JW, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Pearton SJ, Dabiran AM, Wowchack AM, Polley CJ, Chow PP Solid-State Electronics, 45(12), 1979, 2001 |
| 4 |
Common-base operation of GaN bipolar junction transistors Cao XA, Dang GT, Zhang AP, Ren F, Abernathy CR, Pearton SJ, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Chu SNG Electrochemical and Solid State Letters, 3(7), 333, 2000 |
| 5 |
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Ren F, Dang G, Zhang AP, Abernathy CR, Pearton SJ Solid-State Electronics, 44(4), 649, 2000 |
| 6 |
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions Dang G, Luo B, Zhang AP, Cao XA, Ren F, Pearton SJ, Cho H, Hobson WS, Lopata J, van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ Solid-State Electronics, 44(12), 2097, 2000 |