검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G Solid-State Electronics, 125, 118, 2016 |
| 2 |
Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance Manoi A, Pomeroy JW, Lossy R, Pazirandeh R, Wurfl J, Uren MJ, Martin T, Kuball M Solid-State Electronics, 57(1), 14, 2011 |
| 3 |
2 MeV ion irradiation effects on AlGaN/GaN HFET devices Sonia G, Richtera E, Brunner F, Denker A, Lossy R, Mai M, Lenk F, Bundesmann J, Pensl G, Schmidt J, Zeimer U, Wang L, Baskar K, Weyers M, Wurfl J, Trankle G Solid-State Electronics, 52(7), 1011, 2008 |
| 4 |
Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC Wernicke T, Kruger O, Herms M, Wurfl J, Neumann W, Behm T, Irmer G, Trankle G Applied Surface Science, 253(19), 8008, 2007 |
| 5 |
Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor Brunner F, Bergunde T, Richter E, Kurpas P, Achouche M, Maassdorf A, Wurfl J, Weyers M Journal of Crystal Growth, 221, 53, 2000 |
| 6 |
Ohmic Contacts on P-In0.53Ga0.47As Prepared by Zn Implantation Irate Pd-Based Metallizations Ressel P, Strusny H, Vogel K, Wurfl J, Fritzsche D, Krautle H, Kuphal E, Mause K, Trapp M, Richter U Journal of Vacuum Science & Technology B, 13(6), 2297, 1995 |