검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D Applied Surface Science, 255(4), 1415, 2008 |
| 2 |
Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D Applied Surface Science, 255(4), 1440, 2008 |
| 3 |
Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient Caubet P, Blomberg T, Benaboud R, Wyon C, Blanquet E, Gonchond JP, Juhel M, Bouvet P, Gros-Jean M, Michailos J, Richard C, Iteprat B Journal of the Electrochemical Society, 155(8), H625, 2008 |
| 4 |
SIMS depth profiling of boron ultra shallow junctions using oblique O-2(+) beams down to 150 eV Juhel A, Laugier F, Delille D, Wyon C, Kwakman LFT, Hopstaken A Applied Surface Science, 252(19), 7211, 2006 |
| 5 |
X-ray metrology for advanced silicon processes Wyon C, Gonchond JP, Delille D, Michallet A, Royer JC, Kwakman L, Marthon S Applied Surface Science, 253(1), 21, 2006 |
| 6 |
In-line monitoring of advanced microelectronic processes using combined X-ray techniques Wyon C, Delille D, Gonchond JP, Heider F, Kwakman L, Marthon S, Mazor I, Michallet A, Muyard D, Perino-Gallice L, Royer JC, Tokar A Thin Solid Films, 450(1), 84, 2004 |
| 7 |
Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions Borsoni G, Le Roux V, Laffitte R, Kerdiles S, Bechu N, Vallier L, Korwin-Pawlowski ML, Vannuffel C, Bertin F, Vergnaud C, Chabli A, Wyon C Solid-State Electronics, 46(11), 1855, 2002 |
| 8 |
Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices Baron T, Martin F, Mur P, Wyon C, Dupuy M, Busseret C, Souifi A, Guillot G Applied Surface Science, 164, 29, 2000 |
| 9 |
Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices Baron T, Martin F, Mur P, Wyon C, Dupuy M Journal of Crystal Growth, 209(4), 1004, 2000 |