검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step A1N buffer layer Yan JF, Guo LW, Zhang J, Zhu XL, Ding GJ, Xing ZG, Zhou ZT, Pei XJ, Wang Y, Jia HQ, Chen H, Zhou JM Journal of Crystal Growth, 307(1), 35, 2007 |
| 2 |
Crystallographic wing tilt and thermal-stress distribution of GaN laterally overgrown on maskless V-grooved sapphire substrate by metal-organic chemical vapor deposition Xing ZG, Wang J, Wang Y, Wang XH, Zhou ZT, Chen H, Zhou JM Journal of Vacuum Science & Technology B, 25(3), 697, 2007 |
| 3 |
Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching Wang J, Guo LW, Jia HQ, Xing ZG, Wang Y, Yan JF, Yu NS, Chen H, Zhou JM Journal of Crystal Growth, 290(2), 398, 2006 |
| 4 |
Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN Wang J, Guo LW, Jia HQ, Wang Y, Xing ZG, Li W, Chen H, Zhou JM Journal of the Electrochemical Society, 153(3), C182, 2006 |
| 5 |
Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching Wang J, Guo LW, Jia HQ, Xing ZG, Wang Y, Chen H, Zhou JM Thin Solid Films, 515(4), 1727, 2006 |
| 6 |
Influence of threading dislocations on the properties of InGaN-based multiple quantum wells Yu HB, Chen H, Li DS, Wang J, Xing ZG, Zheng XH, Huang Q, Zhou JM Journal of Crystal Growth, 266(4), 455, 2004 |