검색결과 : 2건
No. | Article |
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1 |
Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals Nakano T, Shinagawa N, Yabu M, Ohtani N Journal of Crystal Growth, 516, 51, 2019 |
2 |
The analysis of curing kinetics of sealants Matsui T, Kojima H, Yabu M KAGAKU KOGAKU RONBUNSHU, 25(1), 117, 1999 |