화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Faceting mechanisms of Si nanowires and gold spreading
Vincent L, Boukhicha R, Gardes C, Renard C, Yam V, Fossard F, Patriarche G, Bouchier D
Journal of Materials Science, 47(4), 1609, 2012
2 Gold nanocluster distribution on faceted and kinked Si nanowires
Boukhicha R, Vincent L, Renard C, Gardes C, Yam V, Fossard F, Patriarche G, Jabeen F, Bouchier D
Thin Solid Films, 520(8), 3304, 2012
3 Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism
Renard C, Boukhicha R, Gardes C, Fossard F, Yam V, Vincent L, Bouchier D, Hajjar S, Bubendorff JL, Garreau G, Pirri C
Thin Solid Films, 520(8), 3314, 2012
4 Ge growth over thin SiO(2) by UHV-CVD for MOSFET applications
Renard C, Halbwax M, Cammilleri D, Fossard F, Yam V, Bouchier D, Zheng Y
Thin Solid Films, 517(1), 401, 2008
5 Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor deposition
Halbwax M, Renard C, Cammilleri D, Yam V, Fossard F, Bouchier D, Zheng Y, Rzepka E
Journal of Crystal Growth, 308(1), 26, 2007
6 Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters
Nguyen-Duc TK, Le Thanh V, Yam V, Boucaud P, Bouchier D, Schmidt OG, Derrien J
Thin Solid Films, 508(1-2), 207, 2006
7 Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(001) surfaces
Nguyen LH, LeThanh V, Debarre D, Yam V, Halbwax M, El Kurdi M, Bouchier D, Rosner P, Becker M, Benamara M, Strunk HP
Applied Surface Science, 224(1-4), 134, 2004
8 Kinetics of Si capping process of Ge/Si(001) quantum dots
Yam V, Le Thanh V, Debarre D, Zheng Y, Bouchier D
Applied Surface Science, 224(1-4), 143, 2004
9 Superlattices of self-assembled Ge/Si(001) quantum dots
Le Thanh V, Yam V
Applied Surface Science, 212, 296, 2003
10 Kinetics of the heteroepitaxial growth of Ge on Si(001)
Yam V, Le Thanh V, Boucaud P, Debarre D, Bouchier D
Journal of Vacuum Science & Technology B, 20(3), 1251, 2002