| 1 |
Development of the ultra-high-sensitive Kr adsorption technique to evaluate the pore-size distribution of thin-film materials
Yanazawa H, Mastunaga H, Itoh H, Nakai K, Suzuki I
Journal of Vacuum Science & Technology B, 20(5), 1833, 2002 |
| 2 |
Material analysis on degradation phenomena caused by hot carrier in 0.35 mu m WSi gate GaAs heterostructure insulated gate field effect transistors
Ohshika K, Yamashita T, Fukui M, Yanazawa H, Takatani S, Matsumoto H
Journal of the Electrochemical Society, 148(5), G249, 2001 |
| 3 |
Automated Xe adsorption technique to measure small Brunauer-Emmett-Teller surface area of several square centimeters
Yanazawa H, Furukawa R, Yamamoto S, Suzuki I, Miura K
Journal of Vacuum Science & Technology B, 19(6), 2262, 2001 |
| 4 |
Quantitative surface area evaluation of rugged polycrystalline Si plate for dynamic random access memory capacitor by xenon adsorption
Yanazawa H, Futase T, Suzuki I
Journal of Vacuum Science & Technology B, 17(6), 2656, 1999 |
| 5 |
Optimization of SiON film compositions for encapsulation of refractory metal gate GaAs metal-semiconductor field effect transistor
Ohshika K, Yanazawa H, Kuroda J, Kayama S, Sasaki Y
Journal of the Electrochemical Society, 145(1), 323, 1998 |
