| 1 |
Effect of H-2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma
Yamada T, Ohmi H, Kakiuchi H, Yasutake K
Plasma Chemistry and Plasma Processing, 33(4), 797, 2013 |
| 2 |
Systematic screen for genes involved in the regulation of oxidative stress in the nematode Caenorhabditis elegans
Ueno S, Yasutake K, Tohyama D, Fujimori T, Ayusawa D, Fujii M
Biochemical and Biophysical Research Communications, 420(3), 552, 2012 |
| 3 |
Silicon Oxide Coatings with Very High Rates (> 10 nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode
Kakiuchi H, Ohmi H, Yamada T, Yokoyama K, Okamura K, Yasutake K
Plasma Chemistry and Plasma Processing, 32(3), 533, 2012 |
| 4 |
PFC-Free Dry Etching Method for Si Using Narrow-Gap VHF Plasma at Subatmospheric Pressure
Ohmi H, Kishimoto K, Kakiuchi H, Yasutake K
Journal of the Electrochemical Society, 157(2), D85, 2010 |
| 5 |
Room-Temperature Silicon Nitrides Prepared with Very High Rates (> 50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma
Kakiuchi H, Ohmi H, Nakamura K, Yamaguchi Y, Yasutake K
Plasma Chemistry and Plasma Processing, 30(5), 579, 2010 |
| 6 |
Formation of microcrystalline SiC films by chemical transport with a high-pressure glow plasma of pure hydrogen
Ohmi H, Hamaoka Y, Kamada D, Kakiuchi H, Yasutake K
Thin Solid Films, 519(1), 11, 2010 |
| 7 |
Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma
Kakiuchi H, Ohmi H, Yamaguchi Y, Nakamura K, Yasutake K
Thin Solid Films, 519(1), 235, 2010 |
| 8 |
Occurrence of Bacillus thuringiensis in Canopies of a Natural Lucidophyllous Forest in Japan
Noda T, Kagoshima K, Uemori A, Yasutake K, Ichikawa M, Ohba M
Current Microbiology, 58(3), 195, 2009 |
| 9 |
Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure
Ikuta T, Fujita S, Iwamoto H, Kadomura S, Shimura T, Watanabe H, Yasutake K
Journal of Crystal Growth, 310(21), 4507, 2008 |
| 10 |
Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H-2/CH4 plasma
Kakiuchi H, Ohmi H, Yasutake K
Thin Solid Films, 516(19), 6580, 2008 |
