1 |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors Lu YH, Chang TC, Ho SH, Chen CE, Tsai JY, Liu KJ, Liu XW, Lin CY, Tseng TY, Cheng O, Huang CT, Yen WT Thin Solid Films, 620, 43, 2016 |
2 |
Preparation and characterization of Cu(In,Ga)(Se,S)(2) films without selenization by co-sputtering from Cu(In,Ga)Se-2 quaternary and In2S3 targets Lin YC, Ke JH, Yen WT, Liang SC, Wu CH, Chiang CT Applied Surface Science, 257(9), 4278, 2011 |
3 |
Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering Lin YC, Wang BL, Yen WT, Shen CH Thin Solid Films, 519(16), 5571, 2011 |
4 |
Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering Yen WT, Lin YC, Yao PC, Ke JH, Chen YL Applied Surface Science, 256(11), 3432, 2010 |
5 |
Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications Yen WT, Lin YC, Ke JH Applied Surface Science, 257(3), 960, 2010 |
6 |
Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition Yao PC, Hang ST, Lin YS, Yen WT, Lin YC Applied Surface Science, 257(5), 1441, 2010 |
7 |
Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering Yen WT, Lin YC, Yao PC, Ke JH, Chen YL Thin Solid Films, 518(14), 3882, 2010 |
8 |
Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering Lin YC, Wang BL, Yen WT, Ha CT, Peng C Thin Solid Films, 518(17), 4928, 2010 |
9 |
Effect of Cr and V dopants on the chemical stability of AZO thin film Lin YC, Jiang JH, Yen WT Applied Surface Science, 255(6), 3629, 2009 |
10 |
A Study on the Bonding Conditions and Mechanism for Glass-to-Glass Anodic Bonding in Field Emission Display Yen WT, Lin YC Journal of Adhesion Science and Technology, 23(1), 151, 2009 |