| 1 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 68, 32, 2012 |
| 2 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
Solid-State Electronics, 72, 8, 2012 |
| 3 |
Impact of forward and reverse deep n-well biasing on the 1/f noise of 0.13 mu m n-channel MOSFETs in triple well technology
Png LC, Chew KW, Yeo KS
Solid-State Electronics, 53(6), 599, 2009 |
| 4 |
Simulations of fibre orientation in dilute suspensions with front moving in the filling process of a rectangular channel using level-set method
Dou HS, Khoo BC, Phan-Thien N, Yeo KS, Zheng R
Rheologica Acta, 46(4), 427, 2007 |
| 5 |
Numerical simulation of fibre suspension flow through an axisymmetric contraction and expansion passages by Brownian configuration field method
Lu ZM, Khoo BC, Dou HS, Phan-Thien N, Yeo KS
Chemical Engineering Science, 61(15), 4998, 2006 |
| 6 |
Impact of device scaling on the 1/f noise performance of deep submicrometer thin gate oxide CMOS devices
Chew KW, Yeo KS, Chu SFS, Cheng M
Solid-State Electronics, 50(7-8), 1219, 2006 |
| 7 |
Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors
Chew KW, Yeo KS, Chu SF
Solid-State Electronics, 48(7), 1101, 2004 |
| 8 |
A comprehensive geometrical and biasing analysis for latchup in 0.18-mu m COSi2STI CMOS structure
Goh WL, Yeo KS
Solid-State Electronics, 48(12), 2109, 2004 |
| 9 |
Modeling of the body current in a Bi-MOS hybrid-mode environment
Yeo KS, Seah SHL, Ma JG, Do MA
Solid-State Electronics, 44(12), 2199, 2000 |
