검색결과 : 40건
| No. | Article |
|---|---|
| 1 |
Kinetics of plasma oxidation of germanium-tin (GeSn) Wang W, Lei D, Dong Y, Zhang Z, Pan JS, Gong X, Tok ES, Yeo YC Applied Surface Science, 425, 95, 2017 |
| 2 |
Strain-relaxed buffer technology based on metamorphic InxAl1-xAs Loke WK, Tan KH, Wicaksono S, Yoon SF, Wang W, Zhou Q, Yeo YC Journal of Crystal Growth, 424, 68, 2015 |
| 3 |
Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1-xSnx layer on Ge(001) substrate Wang W, Li LZ, Zhou Q, Pan JS, Zhang Z, Tok ES, Yeo YC Applied Surface Science, 321, 240, 2014 |
| 4 |
SELECTED PAPERS FROM THE 6TH INTERNATIONAL SIGE TECHNOLOGY AND DEVICE MEETING (ISTDM 2012) Liu TJK, Koester SJ, Hartmann JM, Loo R, Yeo YC, Carroll M Solid-State Electronics, 83, 1, 2013 |
| 5 |
Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization Ding YJ, Cheng R, Zhou Q, Du AY, Daval N, Nguyen BY, Yeo YC Solid-State Electronics, 83, 37, 2013 |
| 6 |
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation Wang LX, Su SJ, Wang W, Gong X, Yang Y, Guo PF, Zhang GZ, Xue CL, Cheng BW, Han GQ, Yeo YC Solid-State Electronics, 83, 66, 2013 |
| 7 |
In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric Zhang XG, Guo HX, Zhu Z, Gong X, Yeo YC Solid-State Electronics, 84, 83, 2013 |
| 8 |
Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors Kong EYJ, Ivana, Zhang XG, Zhou Q, Pan JS, Zhang Z, Yeo YC Solid-State Electronics, 85, 36, 2013 |
| 9 |
Temperature-dependent phase separation during annealing of Ge2Sb2Te5 thin films in vacuum Zhang Z, Pan JS, Fang LWW, Yeo YC, Foo YL, Zhao R, Shi LP, Tok ES Applied Surface Science, 258(16), 6075, 2012 |
| 10 |
Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs Wang LX, Han GQ, Su SJ, Zhou Q, Yang Y, Guo PF, Wang W, Tong Y, Lim PSY, Liu B, Kong EYJ, Xue CL, Wang QM, Cheng BW, Yeo YC Electrochemical and Solid State Letters, 15(6), H179, 2012 |