검색결과 : 16건
No. | Article |
---|---|
1 |
Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring Yoo HK, Moreschini L, Bostwick A, Walter AL, Noh TW, Rotenberg E, Chang YJ Current Applied Physics, 20(11), 1268, 2020 |
2 |
Evidence for absence of metallic surface states in BiO2-terminated BaBiO3 thin films Oh JS, Kim M, Kim G, Lee HG, Yoo HK, Sinn S, Chang YJ, Han M, Jozwiak C, Bostwick A, Rotenberg E, Kim HD, Noh TW Current Applied Physics, 18(6), 658, 2018 |
3 |
Evidence for absence of metallic surface states in BiO2-terminated BaBiO3 thin films Oh JS, Kim M, Kim G, Lee HG, Yoo HK, Sinn S, Chang YJ, Han M, Jozwiak C, Bostwick A, Rotenberg E, Kim HD, Noh TW Current Applied Physics, 18(6), 658, 2018 |
4 |
Polaron Transport and Thermoelectric Behavior in La-Doped SrTiO3 Thin Films with Elemental Vacancies Choi WS, Yoo HK, Ohta H Advanced Functional Materials, 25(5), 799, 2015 |
5 |
Forming process of unipolar resistance switching in Ta2O5-x thin films Lee SB, Yoo HK, Kang BS Current Applied Physics, 13(7), 1172, 2013 |
6 |
Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes Yoon Y, Lee H, Kim T, Kim K, Choi S, Yoo HK, Friedman B, Lee K Solid-State Electronics, 79, 45, 2013 |
7 |
Forming time of conducting channels in double-layer Pt/Ta2O5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories Yoo HK, Kang BS, Lee SB Thin Solid Films, 540, 190, 2013 |
8 |
Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5-x thin films Yoon MJ, Lee SB, Yoo HK, Sinn S, Kang BS Current Applied Physics, 12(3), 846, 2012 |
9 |
Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell Lee SB, Chang SH, Yoo HK, Yoon MJ, Yang SM, Kang BS Current Applied Physics, 12(6), 1515, 2012 |
10 |
Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory Chang SH, Lee SB, Jeon DY, Park SJ, Kim GT, Yang SM, Chae SC, Yoo HK, Kang BS, Lee MJ, Noh TW Advanced Materials, 23(35), 4063, 2011 |