검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE Yurasov DV, Antonov AV, Drozdov MN, Yunin PA, Andreev BA, Bushuykin PA, Baydakova NA, Novikov AV Journal of Crystal Growth, 491, 26, 2018 |
| 2 |
Antimony segregation and n-type doping in Si/Si(111) films grown by molecular beam epitaxy Yurasov DV, Drozdov MN, Schmagin VB, Yunin PA, Novikov AV Journal of Crystal Growth, 475, 291, 2017 |
| 3 |
Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry Volkov PV, Goryunov AV, Lobanov DN, Luk'yanov AY, Novikov AV, Tertyshnik AD, Shaleev MV, Yurasov DV Journal of Crystal Growth, 448, 89, 2016 |
| 4 |
Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry Drozdov MN, Drozdov YN, Csik A, Novikov AV, Vad K, Yunin PA, Yurasov DV, Belykh SF, Gololobov GP, Suvorov DV, Tolstogouzov A Thin Solid Films, 607, 25, 2016 |
| 5 |
Real-time measurement of substrate temperature in molecular beam epitaxy using low-coherence tandem interferometry Yurasov DV, Luk'yanov AY, Volkov PV, Goryunov AV, Tertyshnik AD, Drozdov MN, Novikov AV Journal of Crystal Growth, 413, 42, 2015 |
| 6 |
Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters Yurasov DV, Drozdov MN, Zakharov ND, Novikov AV Journal of Crystal Growth, 396, 66, 2014 |
| 7 |
Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures Yurasov DV, Shaleev MV, Novikov AV Journal of Crystal Growth, 313(1), 12, 2010 |