검색결과 : 10건
No. | Article |
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1 |
Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well Tonkikh AA, Zakharov ND, Talalaev VG, Eisenschmidt C, Schilling J, Werner P Journal of Crystal Growth, 425, 172, 2015 |
2 |
Aperiodic SiSn/Si multilayers for thermoelectric applications Tonkikh AA, Zakharov ND, Eisenschmidt C, Leipner HS, Werner P Journal of Crystal Growth, 392, 49, 2014 |
3 |
Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters Yurasov DV, Drozdov MN, Zakharov ND, Novikov AV Journal of Crystal Growth, 396, 66, 2014 |
4 |
Sb mediated formation of Ge/Si quantum dots: Growth and properties Tonkikh AA, Zakharov ND, Novikov AV, Kudryavtsev KE, Talalaev VG, Fuhrmann B, Leipner HS, Werner P Thin Solid Films, 520(8), 3322, 2012 |
5 |
Sb-modified growth of stacked Ge/Si(100) quantum dots Tonkikh AA, Zakharov ND, Pippel E, Werner P Thin Solid Films, 519(11), 3669, 2011 |
6 |
Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures Wolfsteller A, Geyer N, Nguyen-Duc TK, Das Anungo P, Zakharov ND, Reiche M, Erfurth W, Blumtritt H, Werner P, Gosele U Thin Solid Films, 518(9), 2555, 2010 |
7 |
Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects Vdovin VI, Zakharov ND Thin Solid Films, 517(1), 278, 2008 |
8 |
Growth phenomena of Si and Si/Ge nanowires on Si(111) by molecular beam epitaxy Zakharov ND, Werner P, Gerth G, Schubert L, Sokolov L, Gosele U Journal of Crystal Growth, 290(1), 6, 2006 |
9 |
Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE Cirlin GE, Zakharov ND, Egorov VA, Werner P, Ustinov VM, Ledentsov NN Thin Solid Films, 428(1-2), 156, 2003 |
10 |
HRTEM Studies of 2 New (Nd,Ca)(X)WO3 Bronzes Synthesized Under High-Pressure Conditions Zakharov ND, Lilientalweber Z, Filonenko VP, Zibrov IP, Sundberg M Materials Research Bulletin, 31(4), 373, 1996 |