화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A
Journal of Crystal Growth, 440, 6, 2016
2 In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T
Journal of Crystal Growth, 301, 71, 2007
3 Heteroepitaxy of GaN on silicon: In situ measurements
Krost A, Dadgar A, Schulze F, Clos R, Haberland K, Zettler T
Materials Science Forum, 483, 1051, 2005
4 In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature
Dadgar A, Schulze F, Zettler T, Haberland K, Clos R, Strassburger G, Blasing J, Diez A, Krost A
Journal of Crystal Growth, 272(1-4), 72, 2004
5 Papers presented at the 1999 E-MRS Spring Conference, Symposium P: Optical Characterization of Semiconductor Layers and Surfaces Strasbourg, France, June 1-4, 1999 - Preface
Zettler T, Hunderi O, Del Sole R
Thin Solid Films, 364(1-2), IX, 2000
6 Processes of quantum dot formation in the InAs on GaAs(001) system : A reflectance anisotropy spectroscopy study
Westwood DI, Sobiesierski Z, Matthai CC, Steimetz E, Zettler T, Richter W
Journal of Vacuum Science & Technology B, 16(4), 2358, 1998
7 Investigation of Roughened Silicon Surfaces Using Fractal Analysis .2. Chemical Etching, Rapid Thermal Chemical-Vapor-Deposition, and Thermal-Oxidation
Spanos L, Liu Q, Irene EA, Zettler T, Hornung B, Wortman JJ
Journal of Vacuum Science & Technology A, 12(5), 2653, 1994