화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Properties of surface and interface structure of AlN/3C-SiC/Ge/Si (111) heterostructure
Nader R, Kazan M, Zgheib C, Pezoldt J, Masri P
Journal of Crystal Growth, 311(23-24), 4665, 2009
2 Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Morales FM, Zgheib C, Molina SI, Araujo D, Garcia R, Fernandez C, Sanz-Hervas A, Masri P, Weih P, Stauden T, Ambacher O, Pezoldt J
Materials Science Forum, 457-460, 297, 2004
3 Stress control in 3C-SiC films grown on Si(111)
Zgheib C, Masri P, Weih P, Ambacher O, Pezoldt J
Materials Science Forum, 457-460, 301, 2004
4 Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
Zgheib C, Forster C, Weih R, Cimalla V, Kazan M, Masri R, Ambacher O, Pezoldt J
Thin Solid Films, 455-56, 183, 2004