검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Growth of GaN films on PLD-deposited TaC substrates Kirchner KW, Derenge MA, Zheleva TS, Vispute RD, Jones KA Journal of Crystal Growth, 312(19), 2661, 2010 |
| 2 |
Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density Ewing DJ, Derenge MA, Shah PB, Lee U, Zheleva TS, Jones KA Journal of Vacuum Science & Technology B, 26(4), 1368, 2008 |
| 3 |
Structural defects formed in Al-implanted and annealed 4H-SiC Jones KA, Zheleva TS, Kulkarni VN, Ervin MH, Derenge MA, Vispute RD Materials Science Forum, 457-460, 889, 2004 |
| 4 |
Activation of implanted Al and co-implanted Al/C or Al/Si in 4H-SiC Jones KA, Zheleva TS, Ervin MH, Shah PB, Derenge MA, Gerardi G, Freitas JA, Vispute RD Materials Science Forum, 457-460, 929, 2004 |
| 5 |
A comparison of the AIN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere Derenge MA, Jones KA, Kirchner KW, Ervin MH, Zheleva TS, Hullavarad S, Vispute RD Solid-State Electronics, 48(10-11), 1867, 2004 |
| 6 |
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC Ruppalt LB, Stafford S, Yuan D, Jones KA, Ervin MH, Kirchner KW, Zheleva TS, Wood MC, Geil BR, Forsythe E, Vispute RD, Venkatesan T Solid-State Electronics, 47(2), 253, 2003 |
| 7 |
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures Zheleva TS, Nam OH, Ashmawi WM, Griffin JD, Davis RF Journal of Crystal Growth, 222(4), 706, 2001 |
| 8 |
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization Davis RF, Gehrke T, Linthicum KJ, Zheleva TS, Preble EA, Rajagopal P, Zorman CA, Mehregany M Journal of Crystal Growth, 225(2-4), 134, 2001 |
| 9 |
Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films Davis RF, Nam OH, Zheleva TS, Gehrke T, Linthicum KJ, Rajagopal P Materials Science Forum, 338-3, 1471, 2000 |