화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Indirect boron diffusion in amorphous silicon modeled by kinetic Monte Carlo
Martin-Bragado I, Zographos N
Solid-State Electronics, 55(1), 25, 2011
2 Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model
Vollenweider K, Sahli B, Zographos N, Zechner C
Journal of Vacuum Science & Technology B, 28(1), C1G1, 2010
3 Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs
Bazizi EM, Pakfar A, Fazzini PF, Cristiano F, Tavernier C, Claverie A, Zographos N, Zechner C, Scheid E
Thin Solid Films, 518(9), 2427, 2010
4 From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
Martin-Bragado I, Avci I, Zographos N, Jaraiz M, Castrillo P
Solid-State Electronics, 52(9), 1430, 2008